All MOSFET. HRLD80N06K Datasheet

 

HRLD80N06K MOSFET. Datasheet pdf. Equivalent


   Type Designator: HRLD80N06K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 160 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 100 nC
   trⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 380 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: DPAK

 HRLD80N06K Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HRLD80N06K Datasheet (PDF)

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 hrld80n06k hrlu80n06k.pdf

HRLD80N06K HRLD80N06K

June 2015BVDSS = 60 VRDS(on) typ HRLD80N06K / HRLU80N06K ID = 80 A60V N-Channel Trench MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHRLD80N06K HRLU80N06K Excellent Switching Characteristics1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 100 nC (Typ.) Extended Safe Operating Area Lower RDS(ON)

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