All MOSFET. HRLD80N06K Datasheet

 

HRLD80N06K Datasheet and Replacement


   Type Designator: HRLD80N06K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 160 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 380 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: DPAK
 

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HRLD80N06K Datasheet (PDF)

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HRLD80N06K

June 2015BVDSS = 60 VRDS(on) typ HRLD80N06K / HRLU80N06K ID = 80 A60V N-Channel Trench MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHRLD80N06K HRLU80N06K Excellent Switching Characteristics1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 100 nC (Typ.) Extended Safe Operating Area Lower RDS(ON)

Datasheet: HRLD150N10K , HRLD1B8N10K , HRLD250N10K , HRLD33N03K , HRLD370N10K , HRLD40N04K , HRLD55N03K , HRLD72N06 , AON7410 , HRLE320N03K , HRLF110N03K , HRLF125N06K , HRLF150N10K , HRLF180N10K , HRLF190N03K , HRLF33N03K , HRLF55N03K .

History: FQPF8N60CYDTU | OSG70R500DF | FDP8441F085 | IPS60R280PFD7S | HY3503C2 | CS9N65F | IRFPF40PBF

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