HRLD80N06K Datasheet. Specs and Replacement

Type Designator: HRLD80N06K

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 160 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 380 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: DPAK

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HRLD80N06K datasheet

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HRLD80N06K

June 2015 BVDSS = 60 V RDS(on) typ HRLD80N06K / HRLU80N06K ID = 80 A 60V N-Channel Trench MOSFET D-PAK I-PAK FEATURES 2 1 Originative New Design 1 3 2 3 Superior Avalanche Rugged Technology HRLD80N06K HRLU80N06K Excellent Switching Characteristics 1.Gate 2. Drain 3. Source Unrivalled Gate Charge 100 nC (Typ.) Extended Safe Operating Area Lower RDS(ON)... See More ⇒

Detailed specifications: HRLD150N10K, HRLD1B8N10K, HRLD250N10K, HRLD33N03K, HRLD370N10K, HRLD40N04K, HRLD55N03K, HRLD72N06, 4435, HRLE320N03K, HRLF110N03K, HRLF125N06K, HRLF150N10K, HRLF180N10K, HRLF190N03K, HRLF33N03K, HRLF55N03K

Keywords - HRLD80N06K MOSFET specs

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