HRLE320N03K MOSFET. Datasheet pdf. Equivalent
Type Designator: HRLE320N03K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 8.5 nC
trⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 62 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
Package: SOT23
HRLE320N03K Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HRLE320N03K Datasheet (PDF)
..1. Size:260K semihow
hrle320n03k.pdf
hrle320n03k.pdf
Jan 2016HRLE320N03K30V N-Channel Trench MOSFETFeatures Key ParametersParameter Value Unit Low Dense Cell DesignBVDSS 30 V Reliable and RuggedID 5A Advanced Trench Process TechnologyRDS(on), typ @10V 27 RDS(on), typ @4.5V 33 ApplicationPackage & Internal Circuit Power Management in Inverter SystemSOT-23 Synchronous Rectification DSGAbsolute Maximum Ratin
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