HRLO125N06K Datasheet and Replacement
Type Designator: HRLO125N06K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 230 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0156 Ohm
Package: SOP8
HRLO125N06K substitution
HRLO125N06K Datasheet (PDF)
hrlo125n06k.pdf

Jan 2016HRLO125N06K60V N-Channel Trench MOSFETFeatures Key ParametersParameter Value Unit High Dense Cell DesignBVDSS 60 V Reliable and RuggedID 10 A Advanced Trench Process TechnologyRDS(on), typ @10V 12.5 RDS(on), typ @4.5V 14.0 ApplicationPackage & Internal Circuit Power Management in Inverter SystemSOP-8 Synchronous RectificationAbsolute Maximum Ratings
hrlo110n03k.pdf

June 2017 HRLO110N03K 30V N-Channel Trench MOSFET Features Key Parameters Parameter Value Unit Low Dense Cell Design, Logic Level BVDSS 30 V Reliable and Rugged ID 13.8 A Advanced Trench Process Technology RDS(on), typ @10V 9.0 m 100% UIS Tested, 100% Rg Tested RDS(on), typ @4.5V 13.0 m Lead free, Halogen Free Application Package & Internal
hrlo180n10k.pdf

Jan 2016HRLO180N10K100V N-Channel Trench MOSFETFeatures Key ParametersParameter Value Unit High Dense Cell DesignBVDSS 100 V Reliable and RuggedID 9.3 A Advanced Trench Process TechnologyRDS(on), typ @10V 16 RDS(on), typ @4.5V 17 ApplicationPackage & Internal Circuit Power Management in Inverter SystemSOP-8 Synchronous RectificationAbsolute Maximum Ratings
Datasheet: HRLF72N06 , HRLF80N06K , HRLFS136N10P , HRLFS190N03K , HRLFS55N03K , HRLFS72N06P , HRLFS90N03K , HRLO110N03K , IRFZ24N , HRLO180N10K , HRLO250N10K , HRLO72N06 , HRLP125N06K , HRLP150N10K , HRLP250N10K , HRLP33N03K , HRLP370N10K .
History: ISZ019N03L5S | IRLML9303
Keywords - HRLO125N06K MOSFET datasheet
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History: ISZ019N03L5S | IRLML9303



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