HRLO125N06K Datasheet and Replacement
Type Designator: HRLO125N06K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 10 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 230 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0156 Ohm
Package: SOP8
- MOSFET Cross-Reference Search
HRLO125N06K Datasheet (PDF)
hrlo125n06k.pdf

Jan 2016HRLO125N06K60V N-Channel Trench MOSFETFeatures Key ParametersParameter Value Unit High Dense Cell DesignBVDSS 60 V Reliable and RuggedID 10 A Advanced Trench Process TechnologyRDS(on), typ @10V 12.5 RDS(on), typ @4.5V 14.0 ApplicationPackage & Internal Circuit Power Management in Inverter SystemSOP-8 Synchronous RectificationAbsolute Maximum Ratings
hrlo110n03k.pdf

June 2017 HRLO110N03K 30V N-Channel Trench MOSFET Features Key Parameters Parameter Value Unit Low Dense Cell Design, Logic Level BVDSS 30 V Reliable and Rugged ID 13.8 A Advanced Trench Process Technology RDS(on), typ @10V 9.0 m 100% UIS Tested, 100% Rg Tested RDS(on), typ @4.5V 13.0 m Lead free, Halogen Free Application Package & Internal
hrlo180n10k.pdf

Jan 2016HRLO180N10K100V N-Channel Trench MOSFETFeatures Key ParametersParameter Value Unit High Dense Cell DesignBVDSS 100 V Reliable and RuggedID 9.3 A Advanced Trench Process TechnologyRDS(on), typ @10V 16 RDS(on), typ @4.5V 17 ApplicationPackage & Internal Circuit Power Management in Inverter SystemSOP-8 Synchronous RectificationAbsolute Maximum Ratings
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: WMM11N80M3 | RFP2N10L | IRFI7536G | AM2314NE | FDMS9620S
Keywords - HRLO125N06K MOSFET datasheet
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History: WMM11N80M3 | RFP2N10L | IRFI7536G | AM2314NE | FDMS9620S



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