HRLO180N10K MOSFET. Datasheet pdf. Equivalent
Type Designator: HRLO180N10K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
|Id|ⓘ - Maximum Drain Current: 9.3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 94 nC
trⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 260 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: SOP8
HRLO180N10K Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HRLO180N10K Datasheet (PDF)
hrlo180n10k.pdf
Jan 2016HRLO180N10K100V N-Channel Trench MOSFETFeatures Key ParametersParameter Value Unit High Dense Cell DesignBVDSS 100 V Reliable and RuggedID 9.3 A Advanced Trench Process TechnologyRDS(on), typ @10V 16 RDS(on), typ @4.5V 17 ApplicationPackage & Internal Circuit Power Management in Inverter SystemSOP-8 Synchronous RectificationAbsolute Maximum Ratings
hrlo110n03k.pdf
June 2017 HRLO110N03K 30V N-Channel Trench MOSFET Features Key Parameters Parameter Value Unit Low Dense Cell Design, Logic Level BVDSS 30 V Reliable and Rugged ID 13.8 A Advanced Trench Process Technology RDS(on), typ @10V 9.0 m 100% UIS Tested, 100% Rg Tested RDS(on), typ @4.5V 13.0 m Lead free, Halogen Free Application Package & Internal
hrlo125n06k.pdf
Jan 2016HRLO125N06K60V N-Channel Trench MOSFETFeatures Key ParametersParameter Value Unit High Dense Cell DesignBVDSS 60 V Reliable and RuggedID 10 A Advanced Trench Process TechnologyRDS(on), typ @10V 12.5 RDS(on), typ @4.5V 14.0 ApplicationPackage & Internal Circuit Power Management in Inverter SystemSOP-8 Synchronous RectificationAbsolute Maximum Ratings
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