HRLO72N06 MOSFET. Datasheet pdf. Equivalent
Type Designator: HRLO72N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 21 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 38.5 nC
trⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 785 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0072 Ohm
Package: SOP8
HRLO72N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HRLO72N06 Datasheet (PDF)
..1. Size:424K semihow
hrlo72n06.pdf
hrlo72n06.pdf
Mar 2023HRLO72N0660V N-Channel Trench MOSFETFeatures Key ParametersParameter Value Unit High Speed Power Switching, Logic LevelBVDSS 60 V Enhanced Body diode dv/dt capabilityID 21 A Enhanced Avalanche RuggednessRDS(on), max @10V 7.2 m 100% UIS Tested, 100% Rg TestedRDS(on), max @4.5V 12.5 m Lead free, Halogen FreeApplicationPackage & Internal Cir
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