HRLP33N03K MOSFET. Datasheet pdf. Equivalent
Type Designator: HRLP33N03K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 115 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 150 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 110 nC
trⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 550 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm
Package: TO220
HRLP33N03K Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HRLP33N03K Datasheet (PDF)
hrlp33n03k.pdf
Sep 2018 HRLP33N03K 30V N-Channel Trench MOSFET Features Key Parameters Parameter Value Unit Low Dense Cell Design, Logic Level BVDSS 30 V Reliable and Rugged ID (Silicon Limited) 150 A Advanced Trench Process Technology RDS(on), typ @10V 2.7 m 100% UIS Tested, 100% Rg Tested RDS(on), typ @4.5V 3.2 m Application Package & Internal Circuit Po
hrlp370n10k.pdf
Oct 2016BVDSS = 100 VRDS(on) typ = 30 HRLP370N10K ID = 25 A100V N-Channel Trench MOSFETTO-220FEATURES Originative New Design Superior Avalanche Rugged Technology 123 Excellent Switching Characteristics1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 53 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 30 (Typ.) @VGS=10V Lower RDS(ON) : 33 (T
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
