HRLP33N03K Datasheet and Replacement
Type Designator: HRLP33N03K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 115 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 150 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 550 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm
Package: TO220
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HRLP33N03K Datasheet (PDF)
hrlp33n03k.pdf

Sep 2018 HRLP33N03K 30V N-Channel Trench MOSFET Features Key Parameters Parameter Value Unit Low Dense Cell Design, Logic Level BVDSS 30 V Reliable and Rugged ID (Silicon Limited) 150 A Advanced Trench Process Technology RDS(on), typ @10V 2.7 m 100% UIS Tested, 100% Rg Tested RDS(on), typ @4.5V 3.2 m Application Package & Internal Circuit Po
hrlp370n10k.pdf

Oct 2016BVDSS = 100 VRDS(on) typ = 30 HRLP370N10K ID = 25 A100V N-Channel Trench MOSFETTO-220FEATURES Originative New Design Superior Avalanche Rugged Technology 123 Excellent Switching Characteristics1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 53 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 30 (Typ.) @VGS=10V Lower RDS(ON) : 33 (T
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: HM4110 | HLML6401 | CS3912 | XP162A11C0PR-G | AM4435 | FQB2P25TM | AP85T03GH-HF
Keywords - HRLP33N03K MOSFET datasheet
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History: HM4110 | HLML6401 | CS3912 | XP162A11C0PR-G | AM4435 | FQB2P25TM | AP85T03GH-HF



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