All MOSFET. HRLP33N03K Datasheet

 

HRLP33N03K MOSFET. Datasheet pdf. Equivalent


   Type Designator: HRLP33N03K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 115 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 150 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 110 nC
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 550 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm
   Package: TO220

 HRLP33N03K Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HRLP33N03K Datasheet (PDF)

 ..1. Size:779K  semihow
 hrlp33n03k.pdf

HRLP33N03K HRLP33N03K

Sep 2018 HRLP33N03K 30V N-Channel Trench MOSFET Features Key Parameters Parameter Value Unit Low Dense Cell Design, Logic Level BVDSS 30 V Reliable and Rugged ID (Silicon Limited) 150 A Advanced Trench Process Technology RDS(on), typ @10V 2.7 m 100% UIS Tested, 100% Rg Tested RDS(on), typ @4.5V 3.2 m Application Package & Internal Circuit Po

 9.1. Size:146K  semihow
 hrlp370n10k.pdf

HRLP33N03K HRLP33N03K

Oct 2016BVDSS = 100 VRDS(on) typ = 30 HRLP370N10K ID = 25 A100V N-Channel Trench MOSFETTO-220FEATURES Originative New Design Superior Avalanche Rugged Technology 123 Excellent Switching Characteristics1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 53 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 30 (Typ.) @VGS=10V Lower RDS(ON) : 33 (T

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