HRLU125N06K
MOSFET. Datasheet pdf. Equivalent
Type Designator: HRLU125N06K
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 94
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4
V
|Id|ⓘ - Maximum Drain Current: 70
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 50
nC
trⓘ - Rise Time: 50
nS
Cossⓘ -
Output Capacitance: 230
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0125
Ohm
Package:
IPAK
HRLU125N06K
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HRLU125N06K
Datasheet (PDF)
..1. Size:339K semihow
hrld125n06k hrlu125n06k.pdf
Oct 2015BVDSS = 60 VRDS(on) typ = 10 HRLD125N06K / HRLU125N06K ID = 70 A60V N-Channel Trench MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHRD125N06K HRU125N06K Excellent Switching Characteristics1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 50 nC (Typ.) Extended Safe Operating Area Lower RDS(ON)
9.1. Size:301K semihow
hrld1b8n10k hrlu1b8n10k.pdf
Sep 2015BVDSS = 100 VRDS(on) typ = HRLD1B8N10K / HRLU1B8N10K ID = 2.7 A100V N-Channel Trench MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHRLD1B8N10K HRLU1B8N10K Excellent Switching Characteristics1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 11.5 nC (Typ.) Extended Safe Operating Area Lower R
9.2. Size:313K semihow
hrld150n10k hrlu150n10k.pdf
Mar 2016BVDSS = 100 VRDS(on) typ =13 HRLD150N10K / HRLU150N10K ID = 70 A100V N-Channel Trench MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHRLD150N10K HRLU150N10K Excellent Switching Characteristics1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 80 nC (Typ.) Extended Safe Operating Area Lower RDS(O
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