HRLU125N06K MOSFET. Datasheet pdf. Equivalent
Type Designator: HRLU125N06K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 94 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id|ⓘ - Maximum Drain Current: 70 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 230 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0125 Ohm
Package: IPAK
HRLU125N06K Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HRLU125N06K Datasheet (PDF)
hrld125n06k hrlu125n06k.pdf
Oct 2015BVDSS = 60 VRDS(on) typ = 10 HRLD125N06K / HRLU125N06K ID = 70 A60V N-Channel Trench MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHRD125N06K HRU125N06K Excellent Switching Characteristics1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 50 nC (Typ.) Extended Safe Operating Area Lower RDS(ON)
hrld1b8n10k hrlu1b8n10k.pdf
Sep 2015BVDSS = 100 VRDS(on) typ = HRLD1B8N10K / HRLU1B8N10K ID = 2.7 A100V N-Channel Trench MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHRLD1B8N10K HRLU1B8N10K Excellent Switching Characteristics1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 11.5 nC (Typ.) Extended Safe Operating Area Lower R
hrld150n10k hrlu150n10k.pdf
Mar 2016BVDSS = 100 VRDS(on) typ =13 HRLD150N10K / HRLU150N10K ID = 70 A100V N-Channel Trench MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHRLD150N10K HRLU150N10K Excellent Switching Characteristics1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 80 nC (Typ.) Extended Safe Operating Area Lower RDS(O
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: KNB2910A | NCEP01T13AD
