HRLU370N10K Datasheet and Replacement
Type Designator: HRLU370N10K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 140 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.037 Ohm
Package: IPAK
HRLU370N10K substitution
HRLU370N10K Datasheet (PDF)
hrld370n10k hrlu370n10k.pdf

Oct 2016 BVDSS = 100 V RDS(on) typ = 30 m HRLD370N10K / HRLU370N10K ID = 25 A 100V N-Channel Trench MOSFET D-PAK I-PAK FEATURES 2 1 Originative New Design 1 3 2 3 Superior Avalanche Rugged Technology HRLD370N10K HRLU370N10K Excellent Switching Characteristics 1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 53 nC (Typ.) Extended S
Datasheet: HRLP40N04K , HRLP55N03K , HRLP72N06 , HRLP80N06K , HRLT1B0N10K , HRLU125N06K , HRLU150N10K , HRLU1B8N10K , AON6380 , HRLU55N03K , HRLU80N06K , HRLW250N10K , HRP100N08K , HRP130N06K , HRP140N06K , HRP180N10K , HRP30N04K .
History: SSP65R190SFD | IRFR4105ZTR | SJMN600R70MD | RU30J30M3 | IRFR3709ZCT | WMO9N65D1 | R6576KNZ1
Keywords - HRLU370N10K MOSFET datasheet
HRLU370N10K cross reference
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HRLU370N10K substitution
HRLU370N10K replacement
History: SSP65R190SFD | IRFR4105ZTR | SJMN600R70MD | RU30J30M3 | IRFR3709ZCT | WMO9N65D1 | R6576KNZ1



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