All MOSFET. HRLU55N03K Datasheet

 

HRLU55N03K MOSFET. Datasheet pdf. Equivalent


   Type Designator: HRLU55N03K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 50 nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: IPAK

 HRLU55N03K Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HRLU55N03K Datasheet (PDF)

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hrld55n03k hrlu55n03k.pdf

HRLU55N03K
HRLU55N03K

Sep 2015BVDSS = 30 VRDS(on) typ HRLD55N03K / HRLU55N03K ID = 100 A30V N-Channel Trench MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHRLD55N03K HRLU55N03K Excellent Switching Characteristics1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 50nC (Typ.) Extended Safe Operating Area Lower RDS(ON) :

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