HRLW250N10K MOSFET. Datasheet pdf. Equivalent
Type Designator: HRLW250N10K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 80 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
|Id|ⓘ - Maximum Drain Current: 38 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 90 nC
trⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 190 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: D2PAK
HRLW250N10K Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HRLW250N10K Datasheet (PDF)
..1. Size:850K semihow
hrlw250n10k.pdf
hrlw250n10k.pdf
Jan 2019 HRLW250N10K 100V N-Channel Trench MOSFET Features Key Parameters Parameter Value Unit High Dense Cell Design BVDSS 100 V Reliable and Rugged ID 38 A Advanced Trench Process Technology RDS(on), typ @10V 20 m RDS(on), typ @4.5V 22 m Application Package & Internal Circuit Power Management in Inverter System D2-PAK Synchronous Rectifi
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