HRLW250N10K Datasheet. Specs and Replacement

Type Designator: HRLW250N10K

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 80 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 38 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 190 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: D2PAK

HRLW250N10K substitution

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HRLW250N10K datasheet

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HRLW250N10K

Jan 2019 HRLW250N10K 100V N-Channel Trench MOSFET Features Key Parameters Parameter Value Unit High Dense Cell Design BVDSS 100 V Reliable and Rugged ID 38 A Advanced Trench Process Technology RDS(on), typ @10V 20 m RDS(on), typ @4.5V 22 m Application Package & Internal Circuit Power Management in Inverter System D2-PAK Synchronous Rectifi... See More ⇒

Detailed specifications: HRLP80N06K, HRLT1B0N10K, HRLU125N06K, HRLU150N10K, HRLU1B8N10K, HRLU370N10K, HRLU55N03K, HRLU80N06K, P60NF06, HRP100N08K, HRP130N06K, HRP140N06K, HRP180N10K, HRP30N04K, HRP33N04K, HRP35N04K, HRP35N06K

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.