All MOSFET. HRLW250N10K Datasheet

 

HRLW250N10K Datasheet and Replacement


   Type Designator: HRLW250N10K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 80 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 38 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: D2PAK
 

 HRLW250N10K substitution

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HRLW250N10K Datasheet (PDF)

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HRLW250N10K

Jan 2019 HRLW250N10K 100V N-Channel Trench MOSFET Features Key Parameters Parameter Value Unit High Dense Cell Design BVDSS 100 V Reliable and Rugged ID 38 A Advanced Trench Process Technology RDS(on), typ @10V 20 m RDS(on), typ @4.5V 22 m Application Package & Internal Circuit Power Management in Inverter System D2-PAK Synchronous Rectifi

Datasheet: HRLP80N06K , HRLT1B0N10K , HRLU125N06K , HRLU150N10K , HRLU1B8N10K , HRLU370N10K , HRLU55N03K , HRLU80N06K , AO3401 , HRP100N08K , HRP130N06K , HRP140N06K , HRP180N10K , HRP30N04K , HRP33N04K , HRP35N04K , HRP35N06K .

History: STT3922N | NCEP1505S

Keywords - HRLW250N10K MOSFET datasheet

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