HRP30N04K MOSFET. Datasheet pdf. Equivalent
Type Designator: HRP30N04K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.6 V
|Id|ⓘ - Maximum Drain Current: 230 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 200 nC
Rise Time (tr): 150 nS
Drain-Source Capacitance (Cd): 1800 pF
Maximum Drain-Source On-State Resistance (Rds): 0.003 Ohm
Package: TO220
HRP30N04K Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HRP30N04K Datasheet (PDF)
hrp30n04k.pdf
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December 2014 BVDSS = 40 V RDS(on) typ = 2.5m HRP30N04K ID = 230 A 40V N-Channel Trench MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Excellent Switching Characteristics 1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 200 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 2.5 m (Typ.
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