HRP58N06K Datasheet and Replacement
Type Designator: HRP58N06K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 210 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id|ⓘ - Maximum Drain Current: 140 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 90 nS
Cossⓘ - Output Capacitance: 570 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm
Package: TO220
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HRP58N06K Datasheet (PDF)
hrp58n06k.pdf

Jan 2015 BVDSS = 60 V RDS(on) typ = 4.7 m HRP58N06K ID = 140 A 60V N-Channel Trench MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Excellent Switching Characteristics 1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 85 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 4.7 m (Typ.) @VG
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: NVMFS5C638NL | AP9926GEO | RW1C020UN | IRF441 | STD4N62K3 | 2SK2544 | GSM3050S
Keywords - HRP58N06K MOSFET datasheet
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History: NVMFS5C638NL | AP9926GEO | RW1C020UN | IRF441 | STD4N62K3 | 2SK2544 | GSM3050S



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