HRP58N06K MOSFET. Datasheet pdf. Equivalent
Type Designator: HRP58N06K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 210 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.8 V
|Id|ⓘ - Maximum Drain Current: 140 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Total Gate Charge (Qg): 85 nC
Rise Time (tr): 90 nS
Drain-Source Capacitance (Cd): 570 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0058 Ohm
Package: TO220
HRP58N06K Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HRP58N06K Datasheet (PDF)
..1. Size:873K semihow
hrp58n06k.pdf
hrp58n06k.pdf
Jan 2015 BVDSS = 60 V RDS(on) typ = 4.7 m HRP58N06K ID = 140 A 60V N-Channel Trench MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Excellent Switching Characteristics 1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 85 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 4.7 m (Typ.) @VG
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
