HRS180N10K MOSFET. Datasheet pdf. Equivalent
Type Designator: HRS180N10K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 63 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.8 V
|Id|ⓘ - Maximum Drain Current: 65 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 85 nC
trⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 280 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: TO220F
HRS180N10K Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HRS180N10K Datasheet (PDF)
..1. Size:190K semihow
hrs180n10k.pdf
hrs180n10k.pdf
Oct 2016BVDSS = 100 VRDS(on) typ = 15 HRS180N10K ID = 65 A100V N-Channel Trench MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Excellent Switching Characteristics1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 85 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 15 (Typ.) @VGS=10V 100% Avalanche Tested
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