All MOSFET. HRS370N10K Datasheet

 

HRS370N10K Datasheet and Replacement


   Type Designator: HRS370N10K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.037 Ohm
   Package: TO220F
 

 HRS370N10K substitution

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HRS370N10K Datasheet (PDF)

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HRS370N10K

Jan 2015BVDSS = 100 VRDS(on) typ = 30 HRS370N10K ID = 25 A60V N-Channel Trench MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Excellent Switching Characteristics1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 50 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 30 (Typ.) @VGS=10V 100% Avalanche Tested

Datasheet: HRP80N08K , HRP85N06K , HRP85N08K , HRP88N08K , HRP90N75K , HRS130N06K , HRS140N06K , HRS180N10K , IRF740 , HRS45N08K , HRS70N06K , HRS80N08K , HRS85N08K , HRS88N08K , HRS90N75K , HRU120N10K , HRU180N10K .

History: IPP037N08N3 | NCEP045N10F

Keywords - HRS370N10K MOSFET datasheet

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