HRS370N10K Datasheet. Specs and Replacement

Type Designator: HRS370N10K

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 140 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.037 Ohm

Package: TO220F

HRS370N10K substitution

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HRS370N10K datasheet

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HRS370N10K

Jan 2015 BVDSS = 100 V RDS(on) typ = 30 HRS370N10K ID = 25 A 60V N-Channel Trench MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Excellent Switching Characteristics 1.Gate 2. Drain 3. Source Unrivalled Gate Charge 50 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) 30 (Typ.) @VGS=10V 100% Avalanche Tested ... See More ⇒

Detailed specifications: HRP80N08K, HRP85N06K, HRP85N08K, HRP88N08K, HRP90N75K, HRS130N06K, HRS140N06K, HRS180N10K, IRF740, HRS45N08K, HRS70N06K, HRS80N08K, HRS85N08K, HRS88N08K, HRS90N75K, HRU120N10K, HRU180N10K

Keywords - HRS370N10K MOSFET specs

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