All MOSFET. HRS70N06K Datasheet

 

HRS70N06K Datasheet and Replacement


   Type Designator: HRS70N06K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 75 nS
   Cossⓘ - Output Capacitance: 420 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: TO220F
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HRS70N06K Datasheet (PDF)

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HRS70N06K

December 2014BVDSS = 60 VRDS(on) typ HRS70N06K ID = 80 A60V N-Channel Trench MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Excellent Switching Characteristics1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 100 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 5.6 (Typ.) @VGS=10V 100% Avalanche Test

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History: 20N03L-TO252 | 2N6762JTXV

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