HRS80N08K Datasheet and Replacement
Type Designator: HRS80N08K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 85 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 500 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: TO220F
HRS80N08K substitution
HRS80N08K Datasheet (PDF)
hrs80n08k.pdf

December 2014BVDSS = 80 VRDS(on) typ HRS80N08K ID = 120 A80V N-Channel Trench MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Excellent Switching Characteristics1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 60nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 6.7 (Typ.) @VGS=10V 100% Avalanche Test
Datasheet: HRP88N08K , HRP90N75K , HRS130N06K , HRS140N06K , HRS180N10K , HRS370N10K , HRS45N08K , HRS70N06K , IRF540 , HRS85N08K , HRS88N08K , HRS90N75K , HRU120N10K , HRU180N10K , HRU50N06K , HRU72N06K , HRU80N06K .
History: BL7N80-A | AON6226 | 2SK439 | IPD122N10N3G | C2M120W040 | VBZMB13N50 | C2M120W280
Keywords - HRS80N08K MOSFET datasheet
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History: BL7N80-A | AON6226 | 2SK439 | IPD122N10N3G | C2M120W040 | VBZMB13N50 | C2M120W280



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