HRU120N10K Datasheet and Replacement
Type Designator: HRU120N10K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 110 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 73 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 340 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: IPAK
HRU120N10K substitution
HRU120N10K Datasheet (PDF)
hrd120n10k hru120n10k.pdf

Sep 2015BVDSS = 100 VRDS(on) typ = 10 HRD120N10K / HRU120N10K ID = 73 A100V N-Channel Trench MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHRD120N10K HRU120N10K Excellent Switching Characteristics1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 65 nC (Typ.) Extended Safe Operating Area Lower RDS(ON)
Datasheet: HRS180N10K , HRS370N10K , HRS45N08K , HRS70N06K , HRS80N08K , HRS85N08K , HRS88N08K , HRS90N75K , IRFZ44 , HRU180N10K , HRU50N06K , HRU72N06K , HRU80N06K , HRW370N10K , HN75N09AP , TMU6N70 , TMD6N70G .
Keywords - HRU120N10K MOSFET datasheet
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History: YJP70G10A | SL2301S



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