All MOSFET. HRU180N10K Datasheet

 

HRU180N10K Datasheet and Replacement


   Type Designator: HRU180N10K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 133 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 65 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 280 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: IPAK
 

 HRU180N10K substitution

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HRU180N10K Datasheet (PDF)

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HRU180N10K

Sep 2015BVDSS = 100 VRDS(on) typ =15 HRD180N10K / HRU180N10K ID = 65 A100V N-Channel Trench MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHRD180N10K HRU180N10K Excellent Switching Characteristics1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 85 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) :

Datasheet: HRS370N10K , HRS45N08K , HRS70N06K , HRS80N08K , HRS85N08K , HRS88N08K , HRS90N75K , HRU120N10K , IRFP460 , HRU50N06K , HRU72N06K , HRU80N06K , HRW370N10K , HN75N09AP , TMU6N70 , TMD6N70G , TMU6N70G .

History: HRU72N06K | LSD80R680GT | LSD80R350GT | STF12NK65Z | CEP85A3

Keywords - HRU180N10K MOSFET datasheet

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