HRU180N10K Datasheet. Specs and Replacement

Type Designator: HRU180N10K

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 133 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 65 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 280 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: IPAK

HRU180N10K substitution

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HRU180N10K datasheet

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HRU180N10K

Sep 2015 BVDSS = 100 V RDS(on) typ =15 HRD180N10K / HRU180N10K ID = 65 A 100V N-Channel Trench MOSFET D-PAK I-PAK FEATURES 2 1 Originative New Design 1 3 2 3 Superior Avalanche Rugged Technology HRD180N10K HRU180N10K Excellent Switching Characteristics 1.Gate 2. Drain 3. Source Unrivalled Gate Charge 85 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ... See More ⇒

Detailed specifications: HRS370N10K, HRS45N08K, HRS70N06K, HRS80N08K, HRS85N08K, HRS88N08K, HRS90N75K, HRU120N10K, IRF640, HRU50N06K, HRU72N06K, HRU80N06K, HRW370N10K, HN75N09AP, TMU6N70, TMD6N70G, TMU6N70G

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