All MOSFET. HRU72N06K Datasheet

 

HRU72N06K Datasheet and Replacement


   Type Designator: HRU72N06K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 450 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0072 Ohm
   Package: IPAK
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HRU72N06K Datasheet (PDF)

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HRU72N06K

Sep 2015BVDSS = 60 VRDS(on) typ HRD72N06K / HRU72N06K ID = 100 A60V N-Channel Trench MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHRD72N06K HRU72N06K Excellent Switching Characteristics1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 75nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 5.8

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History: IRF6601 | IRF1018ES | STD3NK50Z | SVS11N65DD2TR | LSD65R105HF | DH100P40E | NVMFD5483NLT1G

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