HRU80N06K Datasheet. Specs and Replacement

Type Designator: HRU80N06K

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 160 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 114 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 65 nS

Cossⓘ - Output Capacitance: 370 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: IPAK

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HRU80N06K datasheet

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HRU80N06K

Sep 2014 BVDSS = 60 V RDS(on) typ HRD80N06K / HRU80N06K ID = 114 A 60V N-Channel Trench MOSFET D-PAK I-PAK FEATURES 2 1 Originative New Design 1 3 2 3 Superior Avalanche Rugged Technology HRD80N06K HRU80N06K Excellent Switching Characteristics 1.Gate 2. Drain 3. Source Unrivalled Gate Charge 90 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) 6.... See More ⇒

Detailed specifications: HRS80N08K, HRS85N08K, HRS88N08K, HRS90N75K, HRU120N10K, HRU180N10K, HRU50N06K, HRU72N06K, IRFB4110, HRW370N10K, HN75N09AP, TMU6N70, TMD6N70G, TMU6N70G, OSG07N65AF, OSG07N65DF, OSG07N65FF

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