All MOSFET. HRU80N06K Datasheet

 

HRU80N06K Datasheet and Replacement


   Type Designator: HRU80N06K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 160 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 114 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 65 nS
   Cossⓘ - Output Capacitance: 370 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: IPAK
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HRU80N06K Datasheet (PDF)

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HRU80N06K

Sep 2014BVDSS = 60 VRDS(on) typ HRD80N06K / HRU80N06K ID = 114 A60V N-Channel Trench MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHRD80N06K HRU80N06K Excellent Switching Characteristics1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 90 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 6.

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: BSR57 | F5F90HVX2 | MTBA5N10FP | 2SJ44 | IPD80R900P7 | SVGP104R5NS | F5001H

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