All MOSFET. HRU80N06K Datasheet

 

HRU80N06K Datasheet and Replacement


   Type Designator: HRU80N06K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 160 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 114 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 65 nS
   Cossⓘ - Output Capacitance: 370 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: IPAK
 

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HRU80N06K Datasheet (PDF)

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HRU80N06K

Sep 2014BVDSS = 60 VRDS(on) typ HRD80N06K / HRU80N06K ID = 114 A60V N-Channel Trench MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHRD80N06K HRU80N06K Excellent Switching Characteristics1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 90 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 6.

Datasheet: HRS80N08K , HRS85N08K , HRS88N08K , HRS90N75K , HRU120N10K , HRU180N10K , HRU50N06K , HRU72N06K , IRF640N , HRW370N10K , HN75N09AP , TMU6N70 , TMD6N70G , TMU6N70G , OSG07N65AF , OSG07N65DF , OSG07N65FF .

History: MTB06N03H8

Keywords - HRU80N06K MOSFET datasheet

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