All MOSFET. HRW370N10K Datasheet

 

HRW370N10K Datasheet and Replacement


   Type Designator: HRW370N10K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 160 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 25 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.037 Ohm
   Package: D2PAK
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HRW370N10K Datasheet (PDF)

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HRW370N10K

Oct 2016BVDSS = 100 VRDS(on) typ = 30 HRW370N10K ID = 25 A100V N-Channel Trench MOSFETD2-PAKFEATURES2 Originative New Design1 Superior Avalanche Rugged Technology3 Excellent Switching Characteristics1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 50 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 30 (Typ.) @VGS=10V 100% Avalanche Tested

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: TTP105N08A | 2SK1338 | QS8M51 | 2N4393CSM | EMH2801 | NCE0157A | IRLW540A

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