HRW370N10K Datasheet. Specs and Replacement

Type Designator: HRW370N10K

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 160 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 140 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.037 Ohm

Package: D2PAK

HRW370N10K substitution

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HRW370N10K datasheet

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HRW370N10K

Oct 2016 BVDSS = 100 V RDS(on) typ = 30 HRW370N10K ID = 25 A 100V N-Channel Trench MOSFET D2-PAK FEATURES 2 Originative New Design 1 Superior Avalanche Rugged Technology 3 Excellent Switching Characteristics 1.Gate 2. Drain 3. Source Unrivalled Gate Charge 50 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) 30 (Typ.) @VGS=10V 100% Avalanche Tested ... See More ⇒

Detailed specifications: HRS85N08K, HRS88N08K, HRS90N75K, HRU120N10K, HRU180N10K, HRU50N06K, HRU72N06K, HRU80N06K, IRF640N, HN75N09AP, TMU6N70, TMD6N70G, TMU6N70G, OSG07N65AF, OSG07N65DF, OSG07N65FF, OSG07N65PF

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