All MOSFET. HRW370N10K Datasheet

 

HRW370N10K Datasheet and Replacement


   Type Designator: HRW370N10K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 160 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.037 Ohm
   Package: D2PAK
 

 HRW370N10K substitution

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HRW370N10K Datasheet (PDF)

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HRW370N10K

Oct 2016BVDSS = 100 VRDS(on) typ = 30 HRW370N10K ID = 25 A100V N-Channel Trench MOSFETD2-PAKFEATURES2 Originative New Design1 Superior Avalanche Rugged Technology3 Excellent Switching Characteristics1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 50 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 30 (Typ.) @VGS=10V 100% Avalanche Tested

Datasheet: HRS85N08K , HRS88N08K , HRS90N75K , HRU120N10K , HRU180N10K , HRU50N06K , HRU72N06K , HRU80N06K , IRF630 , HN75N09AP , TMU6N70 , TMD6N70G , TMU6N70G , OSG07N65AF , OSG07N65DF , OSG07N65FF , OSG07N65PF .

History: SJMN088R65F

Keywords - HRW370N10K MOSFET datasheet

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