HN75N09AP Datasheet. Specs and Replacement

Type Designator: HN75N09AP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 200 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 90 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: TO220

HN75N09AP substitution

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HN75N09AP datasheet

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Detailed specifications: HRS88N08K, HRS90N75K, HRU120N10K, HRU180N10K, HRU50N06K, HRU72N06K, HRU80N06K, HRW370N10K, IRFP260N, TMU6N70, TMD6N70G, TMU6N70G, OSG07N65AF, OSG07N65DF, OSG07N65FF, OSG07N65PF, OSG50R1K5AF

Keywords - HN75N09AP MOSFET specs

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