All MOSFET. TMU6N70 Datasheet

 

TMU6N70 Datasheet and Replacement


   Type Designator: TMU6N70
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 91 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.65 Ohm
   Package: IPAK
 

 TMU6N70 substitution

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TMU6N70 Datasheet (PDF)

 ..1. Size:429K  trinnotech
 tmd6n70g tmu6n70g tmd6n70 tmu6n70.pdf pdf_icon

TMU6N70

TMD6N70(G)/TMU6N70(G) Features VDSS = 770 V @Tjmax Low gate charge ID = 5A 100% avalanche tested RDS(on) = 1.65 W(max) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D-PAK D I-PAK G S Device Package Marking Remark TMD6N70/TMU6N70 D-PAK/I-PAK TMD6N70/TMU6N70 RoHS TMD6N70G/TMU6N70G D-PAK/I-PAK

 9.1. Size:603K  trinnotech
 tmd6n65g tmu6n65g.pdf pdf_icon

TMU6N70

TMD6N65G/TMU6N65G Features VDSS = 715 V @Tjmax Low gate charge ID = 5.5A 100% avalanche tested RDS(on) = 1.6 W(max) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D-PAK D I-PAK G S Device Package Marking Remark TMD6N65/TMU6N65 D-PAK/I-PAK TMD6N65/TMU6N65 RoHS TMD6N65G/TMU6N65G D-PAK/I-PAK TM

Datasheet: HRS90N75K , HRU120N10K , HRU180N10K , HRU50N06K , HRU72N06K , HRU80N06K , HRW370N10K , HN75N09AP , IRF3710 , TMD6N70G , TMU6N70G , OSG07N65AF , OSG07N65DF , OSG07N65FF , OSG07N65PF , OSG50R1K5AF , OSG50R1K5DF .

History: WMM12N80M3 | SSQ6N60 | WMB014N06HG4 | JCS9N90ABT | SFW031N100C3 | ST12N10D | KNF4540A

Keywords - TMU6N70 MOSFET datasheet

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