All MOSFET. OSG50R1K5AF Datasheet

 

OSG50R1K5AF MOSFET. Datasheet pdf. Equivalent


   Type Designator: OSG50R1K5AF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.9 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 4.84 nC
   trⓘ - Rise Time: 4.8 nS
   Cossⓘ - Output Capacitance: 51.7 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO251

 OSG50R1K5AF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

OSG50R1K5AF Datasheet (PDF)

 ..1. Size:369K  oriental semi
 osg50r1k5af.pdf

OSG50R1K5AF OSG50R1K5AF

OSG50R1K5AF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 5.1. Size:418K  oriental semi
 osg50r1k5pf.pdf

OSG50R1K5AF OSG50R1K5AF

OSG50R1K5PF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 5.2. Size:396K  oriental semi
 osg50r1k5df.pdf

OSG50R1K5AF OSG50R1K5AF

OSG50R1K5DF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 5.3. Size:369K  oriental semi
 osg50r1k5ff.pdf

OSG50R1K5AF OSG50R1K5AF

OSG50R1K5FF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: OSG55R140HF | 2N5905

 

 
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