OSG50R1K5AF Datasheet. Specs and Replacement

Type Designator: OSG50R1K5AF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.8 nS

Cossⓘ - Output Capacitance: 51.7 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO251

OSG50R1K5AF substitution

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OSG50R1K5AF datasheet

 ..1. Size:369K  oriental semi
 osg50r1k5af.pdf pdf_icon

OSG50R1K5AF

OSG50R1K5AF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch... See More ⇒

 5.1. Size:418K  oriental semi
 osg50r1k5pf.pdf pdf_icon

OSG50R1K5AF

OSG50R1K5PF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch... See More ⇒

 5.2. Size:396K  oriental semi
 osg50r1k5df.pdf pdf_icon

OSG50R1K5AF

OSG50R1K5DF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch... See More ⇒

 5.3. Size:369K  oriental semi
 osg50r1k5ff.pdf pdf_icon

OSG50R1K5AF

OSG50R1K5FF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch... See More ⇒

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Detailed specifications: HN75N09AP, TMU6N70, TMD6N70G, TMU6N70G, OSG07N65AF, OSG07N65DF, OSG07N65FF, OSG07N65PF, P55NF06, OSG50R1K5DF, OSG50R1K5FF, OSG50R1K5PF, OSG50R500AF, OSG50R500DF, OSG50R500FF, OSG50R500PF, OSG55R028HF

Keywords - OSG50R1K5AF MOSFET specs

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