OSG50R1K5AF Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: OSG50R1K5AF
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 20 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 3 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 4.8 ns
Cossⓘ - Выходная емкость: 51.7 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.5 Ohm
Тип корпуса: TO251
- подбор MOSFET транзистора по параметрам
OSG50R1K5AF Datasheet (PDF)
osg50r1k5af.pdf

OSG50R1K5AF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch
osg50r1k5pf.pdf

OSG50R1K5PF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch
osg50r1k5df.pdf

OSG50R1K5DF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch
osg50r1k5ff.pdf

OSG50R1K5FF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: BSS214NW | AOD4132 | APL602J | PK5M6EA | TK3A60DA | HAF1002
History: BSS214NW | AOD4132 | APL602J | PK5M6EA | TK3A60DA | HAF1002



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