OSG55R028HF Datasheet. Specs and Replacement

Type Designator: OSG55R028HF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 480 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 550 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 87.3 nS

Cossⓘ - Output Capacitance: 756.8 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm

Package: TO247

OSG55R028HF substitution

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OSG55R028HF datasheet

 ..1. Size:415K  oriental semi
 osg55r028hf.pdf pdf_icon

OSG55R028HF

OSG55R028HF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch... See More ⇒

 4.1. Size:968K  oriental semi
 osg55r028htf.pdf pdf_icon

OSG55R028HF

OSG55R028HTF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switc... See More ⇒

 7.1. Size:929K  oriental semi
 osg55r092hf.pdf pdf_icon

OSG55R028HF

OSG55R092HF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch... See More ⇒

 7.2. Size:912K  oriental semi
 osg55r099hszf.pdf pdf_icon

OSG55R028HF

OSG55R099HSZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery di... See More ⇒

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Detailed specifications: OSG50R1K5AF, OSG50R1K5DF, OSG50R1K5FF, OSG50R1K5PF, OSG50R500AF, OSG50R500DF, OSG50R500FF, OSG50R500PF, STP75NF75, OSG55R028HTF, OSG55R030HZF, OSG55R070FF, OSG55R070HF, OSG55R074FZF, OSG55R074HZF, OSG55R092FF, OSG55R092HF

Keywords - OSG55R028HF MOSFET specs

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