OSG55R028HF Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: OSG55R028HF
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 480 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 550 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 3.9 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 80 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 178.7 nC
trⓘ - Время нарастания: 87.3 ns
Cossⓘ - Выходная емкость: 756.8 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.028 Ohm
Тип корпуса: TO247
OSG55R028HF Datasheet (PDF)
osg55r028hf.pdf

OSG55R028HF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch
osg55r028htf.pdf

OSG55R028HTF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switc
osg55r092hf.pdf

OSG55R092HF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch
osg55r099hszf.pdf

OSG55R099HSZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery di
Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: MTM2N50 | CEP75N06 | RU60E16R | RQ3E120AT | STW12NA50 | ME7607-G | SM3425NHQA
History: MTM2N50 | CEP75N06 | RU60E16R | RQ3E120AT | STW12NA50 | ME7607-G | SM3425NHQA



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