Справочник MOSFET. OSG55R028HF

 

OSG55R028HF Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: OSG55R028HF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 480 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 550 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3.9 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 80 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 178.7 nC
   trⓘ - Время нарастания: 87.3 ns
   Cossⓘ - Выходная емкость: 756.8 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.028 Ohm
   Тип корпуса: TO247
     - подбор MOSFET транзистора по параметрам

 

OSG55R028HF Datasheet (PDF)

 ..1. Size:415K  oriental semi
osg55r028hf.pdfpdf_icon

OSG55R028HF

OSG55R028HF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 4.1. Size:968K  oriental semi
osg55r028htf.pdfpdf_icon

OSG55R028HF

OSG55R028HTF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switc

 7.1. Size:929K  oriental semi
osg55r092hf.pdfpdf_icon

OSG55R028HF

OSG55R092HF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 7.2. Size:912K  oriental semi
osg55r099hszf.pdfpdf_icon

OSG55R028HF

OSG55R099HSZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery di

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History: MTM2N50 | CEP75N06 | RU60E16R | RQ3E120AT | STW12NA50 | ME7607-G | SM3425NHQA

 

 
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