OSG55R108KZF MOSFET. Datasheet pdf. Equivalent

   Type Designator: OSG55R108KZF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 219 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 550 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 37.1 nC
   trⓘ - Rise Time: 71.1 nS
   Cossⓘ - Output Capacitance: 246 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.108 Ohm
   Package: TO263

OSG55R108KZF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS