Справочник MOSFET. OSG55R108KZF

 

OSG55R108KZF Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: OSG55R108KZF
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 219 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 550 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 30 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 71.1 ns
   Cossⓘ - Выходная емкость: 246 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.108 Ohm
   Тип корпуса: TO263
 

 Аналог (замена) для OSG55R108KZF

   - подбор ⓘ MOSFET транзистора по параметрам

 

OSG55R108KZF Datasheet (PDF)

 ..1. Size:413K  oriental semi
osg55r108kzf.pdfpdf_icon

OSG55R108KZF

OSG55R108KZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio

 5.1. Size:392K  oriental semi
osg55r108fzf.pdfpdf_icon

OSG55R108KZF

OSG55R108FZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio

 5.2. Size:889K  oriental semi
osg55r108hzf.pdfpdf_icon

OSG55R108KZF

OSG55R108HZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio

 5.3. Size:891K  oriental semi
osg55r108pzf.pdfpdf_icon

OSG55R108KZF

OSG55R108PZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio

Другие MOSFET... OSG55R070HF , OSG55R074FZF , OSG55R074HZF , OSG55R092FF , OSG55R092HF , OSG55R099HSZF , OSG55R108FZF , OSG55R108HZF , TK10A60D , OSG55R108PZF , OSG55R140FF , OSG55R140PF , OSG55R160HZF , OSG55R160PZF , OSG55R290AF , OSG55R290DF , OSG55R290FF .

History: CJ3134K | BUZ101L | SIHW30N60E | FQP7N60 | KI2310 | STP13N80K5 | NTB5605PG

 

 
Back to Top

 


 
.