All MOSFET. OSG55R108PZF Datasheet

 

OSG55R108PZF Datasheet and Replacement


   Type Designator: OSG55R108PZF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 219 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 550 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 71.1 nS
   Cossⓘ - Output Capacitance: 246 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.108 Ohm
   Package: TO220
 

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OSG55R108PZF Datasheet (PDF)

 ..1. Size:891K  oriental semi
 osg55r108pzf.pdf pdf_icon

OSG55R108PZF

OSG55R108PZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio

 5.1. Size:413K  oriental semi
 osg55r108kzf.pdf pdf_icon

OSG55R108PZF

OSG55R108KZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio

 5.2. Size:392K  oriental semi
 osg55r108fzf.pdf pdf_icon

OSG55R108PZF

OSG55R108FZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio

 5.3. Size:889K  oriental semi
 osg55r108hzf.pdf pdf_icon

OSG55R108PZF

OSG55R108HZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio

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Datasheet: OSG55R074FZF , OSG55R074HZF , OSG55R092FF , OSG55R092HF , OSG55R099HSZF , OSG55R108FZF , OSG55R108HZF , OSG55R108KZF , RFP50N06 , OSG55R140FF , OSG55R140PF , OSG55R160HZF , OSG55R160PZF , OSG55R290AF , OSG55R290DF , OSG55R290FF , OSG55R290PF .

History: SI4880DY | AO6806

Keywords - OSG55R108PZF MOSFET datasheet

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