OSG55R108PZF - аналоги и даташиты транзистора

 

OSG55R108PZF - Даташиты. Аналоги. Основные параметры


   Наименование производителя: OSG55R108PZF
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 219 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 550 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 30 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 71.1 ns
   Cossⓘ - Выходная емкость: 246 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.108 Ohm
   Тип корпуса: TO220
 

 Аналог (замена) для OSG55R108PZF

   - подбор ⓘ MOSFET транзистора по параметрам

 

OSG55R108PZF Datasheet (PDF)

 ..1. Size:891K  oriental semi
 osg55r108pzf.pdf pdf_icon

OSG55R108PZF

OSG55R108PZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio

 5.1. Size:413K  oriental semi
 osg55r108kzf.pdf pdf_icon

OSG55R108PZF

OSG55R108KZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio

 5.2. Size:392K  oriental semi
 osg55r108fzf.pdf pdf_icon

OSG55R108PZF

OSG55R108FZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio

 5.3. Size:889K  oriental semi
 osg55r108hzf.pdf pdf_icon

OSG55R108PZF

OSG55R108HZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... OSG55R074FZF , OSG55R074HZF , OSG55R092FF , OSG55R092HF , OSG55R099HSZF , OSG55R108FZF , OSG55R108HZF , OSG55R108KZF , 5N60 , OSG55R140FF , OSG55R140PF , OSG55R160HZF , OSG55R160PZF , OSG55R290AF , OSG55R290DF , OSG55R290FF , OSG55R290PF .

History: PK6B2BA | DN2450

 

 
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