OSG55R108PZF Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: OSG55R108PZF
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 219 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 550 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 30 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 71.1 ns
Cossⓘ - Выходная емкость: 246 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.108 Ohm
Тип корпуса: TO220
Аналог (замена) для OSG55R108PZF
OSG55R108PZF Datasheet (PDF)
osg55r108pzf.pdf

OSG55R108PZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio
osg55r108kzf.pdf

OSG55R108KZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio
osg55r108fzf.pdf

OSG55R108FZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio
osg55r108hzf.pdf

OSG55R108HZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio
Другие MOSFET... OSG55R074FZF , OSG55R074HZF , OSG55R092FF , OSG55R092HF , OSG55R099HSZF , OSG55R108FZF , OSG55R108HZF , OSG55R108KZF , RFP50N06 , OSG55R140FF , OSG55R140PF , OSG55R160HZF , OSG55R160PZF , OSG55R290AF , OSG55R290DF , OSG55R290FF , OSG55R290PF .
History: SML5025AN | SNN3100L10D | FDD8453LZ-F085 | HQF7N65C | APT1003RBFLLG | SML1002R4CN | ISL9N302AS3ST
History: SML5025AN | SNN3100L10D | FDD8453LZ-F085 | HQF7N65C | APT1003RBFLLG | SML1002R4CN | ISL9N302AS3ST



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