All MOSFET. OSG55R290AF Datasheet

 

OSG55R290AF Datasheet and Replacement


   Type Designator: OSG55R290AF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 550 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 6.3 nS
   Cossⓘ - Output Capacitance: 80.7 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm
   Package: TO251
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OSG55R290AF Datasheet (PDF)

 ..1. Size:397K  oriental semi
 osg55r290af.pdf pdf_icon

OSG55R290AF

OSG55R290AF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 5.1. Size:431K  oriental semi
 osg55r290df.pdf pdf_icon

OSG55R290AF

OSG55R290DF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 5.2. Size:897K  oriental semi
 osg55r290pf.pdf pdf_icon

OSG55R290AF

OSG55R290PF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 5.3. Size:922K  oriental semi
 osg55r290ff.pdf pdf_icon

OSG55R290AF

OSG55R290FF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

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History: 2SK3804-01S | DMNH10H028SCT | WML11N80M3 | IXTP3N120 | KMB7D0NP30QA | SWF8N70K | IRLS4030

Keywords - OSG55R290AF MOSFET datasheet

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