OSG55R290AF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: OSG55R290AF
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 83 W
Предельно допустимое напряжение сток-исток |Uds|: 550 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 15 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 13 nC
Время нарастания (tr): 6.3 ns
Выходная емкость (Cd): 80.7 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.29 Ohm
Тип корпуса: TO251
Аналог (замена) для OSG55R290AF
OSG55R290AF Datasheet (PDF)
osg55r290af.pdf
OSG55R290AF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch
osg55r290df.pdf
OSG55R290DF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch
osg55r290pf.pdf
OSG55R290PF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch
osg55r290ff.pdf
OSG55R290FF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch
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