STM6913A MOSFET. Datasheet pdf. Equivalent
Type Designator: STM6913A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 8.2 A
Qgⓘ - Total Gate Charge: 5.8 nC
Cossⓘ - Output Capacitance: 142 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: SOP8
STM6913A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STM6913A Datasheet (PDF)
stm6913a.pdf
GreenProductS TM6913AS amHop Microelectronics C orp.Aug. 10 2012 ver1.2Dual N-Channel E nhancement Mode Field E ffect TransistorffffPR ODUC T S UMMAR Y FEATUR ESS uper high dense cell design for low R DS (ON).VDS S ID R DS (ON) ( m ) MaxR ugged and reliable.18 @ VGS = 10V30V 8.2AS urface Mount Package.ff25 @ VGS =4.5VD1 D1 D2 D28 7 6 5SO-811 2 3 4
stm6914.pdf
GreenProductSTM6914aS mHop Microelectronics C orp.Ver 1.1Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.32 @ VGS=10VSuface Mount Package.30V 6.5A52 @ VGS=4.5V D2 5 4 G 26D2 3S 2D1 7 2G 1SO-8D1 8 1S 11ABSOLUTE MAXIMUM RATINGS
stm6916.pdf
GreenProductSTM6916aS mHop Microelectronics C orp.Ver 1.0Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.12.5 @ VGS=10VSuface Mount Package.30V 10A16 @ VGS=4.5V 5 4D2 G 26 3D2 S 2D1 7 2 G 1SO-88 1D1 S 11ABSOLUTE MAXIMUM RATINGS
stm6915.pdf
S TM6915S amHop Microelectronics C orp.Dec, 12 2006Dual N-Channel E nhancement Mode Field E ffect TransistorPR ODUC T S UMMAR Y F E ATUR E SS uper high dense cell design for low R DS (ON).VDS S ID R DS (ON) ( m ) MaxR ugged and reliable.19 @ VG S = 10V30V 8.5AS urface Mount Package.28 @ VG S = 4.5VD1 D1 D2 D28 7 6 5S O-811 2 3 4S 1 G 1 S 2 G 2ABS OLUTE MAX
stm6912.pdf
S T M6912S amHop Microelectronics C orp. Aug,18 2005 ver 1.2Dual N-C hannel E nhancement Mode Field E ffect TransistorP R ODUC T S UMMAR Y F E AT UR E SS uper high dense cell design for low R DS (ON).V DS S ID R DS (ON) ( m W ) Max R ugged and reliable.32 @ V G S = 10V30V6AS urface Mount Package.57 @ V G S = 4.5VD1 D1 D2 D28 7 6 5S O-811 2 3 4S 1 G 1 S 2 G 2
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
LIST
Last Update
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918