OSG60R028HF Datasheet. Specs and Replacement

Type Designator: OSG60R028HF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 480 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 3.9 V

Qg ⓘ - Total Gate Charge: 178.7 nC

tr ⓘ - Rise Time: 87.3 nS

Cossⓘ - Output Capacitance: 756.8 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm

Package: TO247

OSG60R028HF substitution

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OSG60R028HF datasheet

 ..1. Size:415K  oriental semi
 osg60r028hf.pdf pdf_icon

OSG60R028HF

OSG60R028HF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch... See More ⇒

 4.1. Size:395K  oriental semi
 osg60r028htf.pdf pdf_icon

OSG60R028HF

OSG60R028HTF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switc... See More ⇒

 4.2. Size:952K  oriental semi
 osg60r028ht3f.pdf pdf_icon

OSG60R028HF

OSG60R028HT3F Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme swit... See More ⇒

 6.1. Size:952K  oriental semi
 osg60r022ht3zf.pdf pdf_icon

OSG60R028HF

OSG60R022HT3ZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery d... See More ⇒

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Detailed specifications: OSG55R580DF, OSG55R580FEF, OSG55R580FF, OSG55R580PF, OSG60R017HT3F, OSG60R018HT3ZF, OSG60R020HT3F, OSG60R022HT3ZF, AO3407, OSG60R028HT3F, OSG60R028HTF, OSG60R030HT3ZF, OSG60R030HTZF, OSG60R030HZF, OSG60R031HT3ZF, OSG60R031HZF, OSG60R035HF

Keywords - OSG60R028HF MOSFET specs

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