OSG60R028HF - аналоги и даташиты транзистора

 

OSG60R028HF - Даташиты. Аналоги. Основные параметры


   Наименование производителя: OSG60R028HF
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 480 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3.9 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 80 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   Qg ⓘ - Общий заряд затвора: 178.7 nC
   tr ⓘ - Время нарастания: 87.3 ns
   Cossⓘ - Выходная емкость: 756.8 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.028 Ohm
   Тип корпуса: TO247
 

 Аналог (замена) для OSG60R028HF

   - подбор ⓘ MOSFET транзистора по параметрам

 

OSG60R028HF Datasheet (PDF)

 ..1. Size:415K  oriental semi
 osg60r028hf.pdf pdf_icon

OSG60R028HF

OSG60R028HF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 4.1. Size:395K  oriental semi
 osg60r028htf.pdf pdf_icon

OSG60R028HF

OSG60R028HTF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switc

 4.2. Size:952K  oriental semi
 osg60r028ht3f.pdf pdf_icon

OSG60R028HF

OSG60R028HT3F Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme swit

 6.1. Size:952K  oriental semi
 osg60r022ht3zf.pdf pdf_icon

OSG60R028HF

OSG60R022HT3ZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery d

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... OSG55R580DF , OSG55R580FEF , OSG55R580FF , OSG55R580PF , OSG60R017HT3F , OSG60R018HT3ZF , OSG60R020HT3F , OSG60R022HT3ZF , 7N60 , OSG60R028HT3F , OSG60R028HTF , OSG60R030HT3ZF , OSG60R030HTZF , OSG60R030HZF , OSG60R031HT3ZF , OSG60R031HZF , OSG60R035HF .

History: OM11N60SA | BUK7508-40B | BUK9275-100A

 

 
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