All MOSFET. OSG60R028HT3F Datasheet

 

OSG60R028HT3F MOSFET. Datasheet pdf. Equivalent


   Type Designator: OSG60R028HT3F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 392 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 126 nC
   trⓘ - Rise Time: 62 nS
   Cossⓘ - Output Capacitance: 401 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
   Package: TO247

 OSG60R028HT3F Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

OSG60R028HT3F Datasheet (PDF)

 ..1. Size:952K  oriental semi
 osg60r028ht3f.pdf

OSG60R028HT3F OSG60R028HT3F

OSG60R028HT3F Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme swit

 3.1. Size:395K  oriental semi
 osg60r028htf.pdf

OSG60R028HT3F OSG60R028HT3F

OSG60R028HTF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switc

 4.1. Size:415K  oriental semi
 osg60r028hf.pdf

OSG60R028HT3F OSG60R028HT3F

OSG60R028HF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 6.1. Size:952K  oriental semi
 osg60r022ht3zf.pdf

OSG60R028HT3F OSG60R028HT3F

OSG60R022HT3ZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery d

 6.2. Size:978K  oriental semi
 osg60r020ht3f.pdf

OSG60R028HT3F OSG60R028HT3F

OSG60R020HT3F Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme swit

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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