OSG60R028HT3F Datasheet and Replacement
Type Designator: OSG60R028HT3F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 392 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 62 nS
Cossⓘ - Output Capacitance: 401 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: TO247
OSG60R028HT3F substitution
OSG60R028HT3F Datasheet (PDF)
osg60r028ht3f.pdf

OSG60R028HT3F Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme swit
osg60r028htf.pdf

OSG60R028HTF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switc
osg60r028hf.pdf

OSG60R028HF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch
osg60r022ht3zf.pdf

OSG60R022HT3ZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery d
Datasheet: OSG55R580FEF , OSG55R580FF , OSG55R580PF , OSG60R017HT3F , OSG60R018HT3ZF , OSG60R020HT3F , OSG60R022HT3ZF , OSG60R028HF , 75N75 , OSG60R028HTF , OSG60R030HT3ZF , OSG60R030HTZF , OSG60R030HZF , OSG60R031HT3ZF , OSG60R031HZF , OSG60R035HF , OSG60R035HT5ZF .
History: CTP06N005 | IXTT140N10P | SSF2341E | STD35NF3LLT4 | SPB04N50C3 | CS6769 | FTK4N70F
Keywords - OSG60R028HT3F MOSFET datasheet
OSG60R028HT3F cross reference
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OSG60R028HT3F replacement
History: CTP06N005 | IXTT140N10P | SSF2341E | STD35NF3LLT4 | SPB04N50C3 | CS6769 | FTK4N70F



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