Справочник MOSFET. OSG60R028HT3F

 

OSG60R028HT3F Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: OSG60R028HT3F
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 392 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 80 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 62 ns
   Cossⓘ - Выходная емкость: 401 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.028 Ohm
   Тип корпуса: TO247
     - подбор MOSFET транзистора по параметрам

 

OSG60R028HT3F Datasheet (PDF)

 ..1. Size:952K  oriental semi
osg60r028ht3f.pdfpdf_icon

OSG60R028HT3F

OSG60R028HT3F Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme swit

 3.1. Size:395K  oriental semi
osg60r028htf.pdfpdf_icon

OSG60R028HT3F

OSG60R028HTF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switc

 4.1. Size:415K  oriental semi
osg60r028hf.pdfpdf_icon

OSG60R028HT3F

OSG60R028HF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 6.1. Size:952K  oriental semi
osg60r022ht3zf.pdfpdf_icon

OSG60R028HT3F

OSG60R022HT3ZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery d

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History: IXFP4N100QM | STP20NM60FP | 2N6760JANTXV | IRLML9301TRPBF | IXFN80N50P | RU7550S | AUIRFZ34N

 

 
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