OSG60R028HT3F Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: OSG60R028HT3F
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 392 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 80 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 62 ns
Cossⓘ - Выходная емкость: 401 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.028 Ohm
Тип корпуса: TO247
- подбор MOSFET транзистора по параметрам
OSG60R028HT3F Datasheet (PDF)
osg60r028ht3f.pdf

OSG60R028HT3F Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme swit
osg60r028htf.pdf

OSG60R028HTF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switc
osg60r028hf.pdf

OSG60R028HF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch
osg60r022ht3zf.pdf

OSG60R022HT3ZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery d
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: IXFP4N100QM | STP20NM60FP | 2N6760JANTXV | IRLML9301TRPBF | IXFN80N50P | RU7550S | AUIRFZ34N
History: IXFP4N100QM | STP20NM60FP | 2N6760JANTXV | IRLML9301TRPBF | IXFN80N50P | RU7550S | AUIRFZ34N



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