OSG60R030HZF Datasheet. Specs and Replacement

Type Designator: OSG60R030HZF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 480 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 105.5 nS

Cossⓘ - Output Capacitance: 708 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: TO247

OSG60R030HZF substitution

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OSG60R030HZF datasheet

 ..1. Size:978K  oriental semi
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OSG60R030HZF

OSG60R030HZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio... See More ⇒

 4.1. Size:387K  oriental semi
osg60r030htzf.pdf pdf_icon

OSG60R030HZF

OSG60R030HTZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery di... See More ⇒

 4.2. Size:948K  oriental semi
osg60r030ht3zf.pdf pdf_icon

OSG60R030HZF

OSG60R030HT3ZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery d... See More ⇒

 6.1. Size:962K  oriental semi
osg60r031hzf.pdf pdf_icon

OSG60R030HZF

OSG60R031HZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio... See More ⇒

Detailed specifications: OSG60R018HT3ZF, OSG60R020HT3F, OSG60R022HT3ZF, OSG60R028HF, OSG60R028HT3F, OSG60R028HTF, OSG60R030HT3ZF, OSG60R030HTZF, STF13NM60N, OSG60R031HT3ZF, OSG60R031HZF, OSG60R035HF, OSG60R035HT5ZF, OSG60R035TT5ZF, OSG60R038HT3ZF, OSG60R040HF, OSG60R041HZF

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