OSG60R030HZF - Даташиты. Аналоги. Основные параметры
Наименование производителя: OSG60R030HZF
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 480 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 80 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 105.5 ns
Cossⓘ - Выходная емкость: 708 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.03 Ohm
Тип корпуса: TO247
Аналог (замена) для OSG60R030HZF
OSG60R030HZF Datasheet (PDF)
osg60r030hzf.pdf

OSG60R030HZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio
osg60r030htzf.pdf

OSG60R030HTZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery di
osg60r030ht3zf.pdf

OSG60R030HT3ZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery d
osg60r031hzf.pdf

OSG60R031HZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio
Другие MOSFET... OSG60R018HT3ZF , OSG60R020HT3F , OSG60R022HT3ZF , OSG60R028HF , OSG60R028HT3F , OSG60R028HTF , OSG60R030HT3ZF , OSG60R030HTZF , IRF2807 , OSG60R031HT3ZF , OSG60R031HZF , OSG60R035HF , OSG60R035HT5ZF , OSG60R035TT5ZF , OSG60R038HT3ZF , OSG60R040HF , OSG60R041HZF .
History: ASDM30P11TD-R | OSG60R031HT3ZF
History: ASDM30P11TD-R | OSG60R031HT3ZF



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