OSG60R035HT5ZF Datasheet. Specs and Replacement

Type Designator: OSG60R035HT5ZF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 350 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 68 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 278 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm

Package: TO247

OSG60R035HT5ZF substitution

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OSG60R035HT5ZF datasheet

 ..1. Size:954K  oriental semi
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OSG60R035HT5ZF

OSG60R035HT5ZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery d... See More ⇒

 4.1. Size:424K  oriental semi
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OSG60R035HT5ZF

OSG60R035HF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch... See More ⇒

 5.1. Size:934K  oriental semi
osg60r035tt5zf.pdf pdf_icon

OSG60R035HT5ZF

OSG60R035TT5ZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery d... See More ⇒

 6.1. Size:387K  oriental semi
osg60r030htzf.pdf pdf_icon

OSG60R035HT5ZF

OSG60R030HTZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery di... See More ⇒

Detailed specifications: OSG60R028HT3F, OSG60R028HTF, OSG60R030HT3ZF, OSG60R030HTZF, OSG60R030HZF, OSG60R031HT3ZF, OSG60R031HZF, OSG60R035HF, P60NF06, OSG60R035TT5ZF, OSG60R038HT3ZF, OSG60R040HF, OSG60R041HZF, OSG60R055TT3F, OSG60R055TT3ZF, OSG60R060HMF, OSG60R060HT3F

Keywords - OSG60R035HT5ZF MOSFET specs

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