OSG60R035HT5ZF Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: OSG60R035HT5ZF
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 350 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 68 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 9 ns
Cossⓘ - Выходная емкость: 278 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.035 Ohm
Тип корпуса: TO247
- подбор MOSFET транзистора по параметрам
OSG60R035HT5ZF Datasheet (PDF)
osg60r035ht5zf.pdf

OSG60R035HT5ZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery d
osg60r035hf.pdf

OSG60R035HF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch
osg60r035tt5zf.pdf

OSG60R035TT5ZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery d
osg60r030htzf.pdf

OSG60R030HTZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery di
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: APL602J | HAF1002 | TK3A60DA | BSS214NW | IRFIBC20G | AOD4132
History: APL602J | HAF1002 | TK3A60DA | BSS214NW | IRFIBC20G | AOD4132



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