OSG60R060PT3F Datasheet. Specs and Replacement

Type Designator: OSG60R060PT3F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 440 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 52 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 220 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: TO220

OSG60R060PT3F substitution

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OSG60R060PT3F datasheet

 ..1. Size:942K  oriental semi
 osg60r060pt3f.pdf pdf_icon

OSG60R060PT3F

OSG60R060PT3F Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme swit... See More ⇒

 5.1. Size:824K  oriental semi
 osg60r060ht3f.pdf pdf_icon

OSG60R060PT3F

OSG60R060HT3F Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme swit... See More ⇒

 5.2. Size:914K  oriental semi
 osg60r060hmf.pdf pdf_icon

OSG60R060PT3F

OSG60R060HMF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. Features Low R & FOM DS(ON) Ultra-low Q rr ... See More ⇒

 5.3. Size:926K  oriental semi
 osg60r060ht3zf.pdf pdf_icon

OSG60R060PT3F

OSG60R060HT3ZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery d... See More ⇒

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Detailed specifications: OSG60R040HF, OSG60R041HZF, OSG60R055TT3F, OSG60R055TT3ZF, OSG60R060HMF, OSG60R060HT3F, OSG60R060HT3ZF, OSG60R060KT3ZF, IRF9640, OSG60R065JT3F, OSG60R069HF, OSG60R069HSF, OSG60R069HZF, OSG60R070FF, OSG60R070HF, OSG60R070HSF, OSG60R070HT3F

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