Справочник MOSFET. OSG60R060PT3F

 

OSG60R060PT3F Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: OSG60R060PT3F
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 440 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 52 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 6 ns
   Cossⓘ - Выходная емкость: 220 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.06 Ohm
   Тип корпуса: TO220
     - подбор MOSFET транзистора по параметрам

 

OSG60R060PT3F Datasheet (PDF)

 ..1. Size:942K  oriental semi
osg60r060pt3f.pdfpdf_icon

OSG60R060PT3F

OSG60R060PT3F Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme swit

 5.1. Size:824K  oriental semi
osg60r060ht3f.pdfpdf_icon

OSG60R060PT3F

OSG60R060HT3F Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme swit

 5.2. Size:914K  oriental semi
osg60r060hmf.pdfpdf_icon

OSG60R060PT3F

OSG60R060HMF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. Features Low R & FOM DS(ON) Ultra-low Q rr

 5.3. Size:926K  oriental semi
osg60r060ht3zf.pdfpdf_icon

OSG60R060PT3F

OSG60R060HT3ZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery d

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History: MCH3484 | DMN30H4D0L

 

 
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