All MOSFET. OSG60R069HSF Datasheet

 

OSG60R069HSF Datasheet and Replacement


   Type Designator: OSG60R069HSF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 342 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 47 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6.7 nS
   Cossⓘ - Output Capacitance: 295 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.069 Ohm
   Package: TO247
 

 OSG60R069HSF substitution

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OSG60R069HSF Datasheet (PDF)

 ..1. Size:390K  oriental semi
osg60r069hsf.pdf pdf_icon

OSG60R069HSF

OSG60R069HSF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS S series is optimized for its switching chara

 4.1. Size:378K  oriental semi
osg60r069hzf.pdf pdf_icon

OSG60R069HSF

OSG60R069HZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio

 4.2. Size:375K  oriental semi
osg60r069hf.pdf pdf_icon

OSG60R069HSF

OSG60R069HF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 6.1. Size:824K  oriental semi
osg60r060ht3f.pdf pdf_icon

OSG60R069HSF

OSG60R060HT3F Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme swit

Datasheet: OSG60R055TT3ZF , OSG60R060HMF , OSG60R060HT3F , OSG60R060HT3ZF , OSG60R060KT3ZF , OSG60R060PT3F , OSG60R065JT3F , OSG60R069HF , IRF9640 , OSG60R069HZF , OSG60R070FF , OSG60R070HF , OSG60R070HSF , OSG60R070HT3F , OSG60R070HT3ZF , OSG60R070KT3ZF , OSG60R070PT3ZF .

History: DMP3020LSS | IRF7739L1

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