Справочник MOSFET. OSG60R069HSF

 

OSG60R069HSF Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: OSG60R069HSF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 342 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 47 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 6.7 ns
   Cossⓘ - Выходная емкость: 295 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.069 Ohm
   Тип корпуса: TO247
     - подбор MOSFET транзистора по параметрам

 

OSG60R069HSF Datasheet (PDF)

 ..1. Size:390K  oriental semi
osg60r069hsf.pdfpdf_icon

OSG60R069HSF

OSG60R069HSF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS S series is optimized for its switching chara

 4.1. Size:378K  oriental semi
osg60r069hzf.pdfpdf_icon

OSG60R069HSF

OSG60R069HZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio

 4.2. Size:375K  oriental semi
osg60r069hf.pdfpdf_icon

OSG60R069HSF

OSG60R069HF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 6.1. Size:824K  oriental semi
osg60r060ht3f.pdfpdf_icon

OSG60R069HSF

OSG60R060HT3F Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme swit

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History: ZXMN2B01FTA | WSD30L40DN | IPD50R280CE | IPD80R4K5P7 | OSG65R1K4AF | NDT6N70 | ELM34802AA-N

 

 
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