All MOSFET. OSG60R074FSZF Datasheet

 

OSG60R074FSZF Datasheet and Replacement


   Type Designator: OSG60R074FSZF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 47 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 88 nS
   Cossⓘ - Output Capacitance: 354 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.074 Ohm
   Package: TO220F
 

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OSG60R074FSZF Datasheet (PDF)

 ..1. Size:923K  oriental semi
 osg60r074fszf.pdf pdf_icon

OSG60R074FSZF

OSG60R074FSZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery di

 4.1. Size:1106K  1
 osg60r074hzf osg60r074fzf.pdf pdf_icon

OSG60R074FSZF

OSG60R074xZF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Applications Ultra-fast and robust body diode PC power Low R & FOM Server power supply DS(on) Excellent low switching loss Telecom Excellent stability and uniformity Solar invertor Easy to drive Super charger for automobiles OSG60R074HZF, OSG60R074FZF , Enhanc

 4.2. Size:1017K  oriental semi
 osg60r074fzf.pdf pdf_icon

OSG60R074FSZF

OSG60R074FZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio

 5.1. Size:924K  oriental semi
 osg60r074hszf.pdf pdf_icon

OSG60R074FSZF

OSG60R074HSZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery di

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Datasheet: OSG60R069HZF , OSG60R070FF , OSG60R070HF , OSG60R070HSF , OSG60R070HT3F , OSG60R070HT3ZF , OSG60R070KT3ZF , OSG60R070PT3ZF , IRF730 , OSG60R074HSZF , OSG60R074JT3ZF , OSG60R074KSZF , OSG60R075HSZF , OSG60R092FF , OSG60R092HF , OSG60R092HSF , OSG60R092HT3ZF .

History: OSG60R070KT3ZF | CS6N60A4D | OSG60R092HT3ZF | PJA3415

Keywords - OSG60R074FSZF MOSFET datasheet

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