Справочник MOSFET. OSG60R074FSZF

 

OSG60R074FSZF Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: OSG60R074FSZF
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 35 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 47 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 88 ns
   Cossⓘ - Выходная емкость: 354 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.074 Ohm
   Тип корпуса: TO220F
 

 Аналог (замена) для OSG60R074FSZF

   - подбор ⓘ MOSFET транзистора по параметрам

 

OSG60R074FSZF Datasheet (PDF)

 ..1. Size:923K  oriental semi
osg60r074fszf.pdfpdf_icon

OSG60R074FSZF

OSG60R074FSZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery di

 4.1. Size:1106K  1
osg60r074hzf osg60r074fzf.pdfpdf_icon

OSG60R074FSZF

OSG60R074xZF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Applications Ultra-fast and robust body diode PC power Low R & FOM Server power supply DS(on) Excellent low switching loss Telecom Excellent stability and uniformity Solar invertor Easy to drive Super charger for automobiles OSG60R074HZF, OSG60R074FZF , Enhanc

 4.2. Size:1017K  oriental semi
osg60r074fzf.pdfpdf_icon

OSG60R074FSZF

OSG60R074FZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio

 5.1. Size:924K  oriental semi
osg60r074hszf.pdfpdf_icon

OSG60R074FSZF

OSG60R074HSZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery di

Другие MOSFET... OSG60R069HZF , OSG60R070FF , OSG60R070HF , OSG60R070HSF , OSG60R070HT3F , OSG60R070HT3ZF , OSG60R070KT3ZF , OSG60R070PT3ZF , BS170 , OSG60R074HSZF , OSG60R074JT3ZF , OSG60R074KSZF , OSG60R075HSZF , OSG60R092FF , OSG60R092HF , OSG60R092HSF , OSG60R092HT3ZF .

History: CHM634PAGP | ZXMN6A07F | NVMFS5A140PLZ

 

 
Back to Top

 


 
.