All MOSFET. OSG60R074KSZF Datasheet

 

OSG60R074KSZF Datasheet and Replacement


   Type Designator: OSG60R074KSZF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 278 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 47 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 66.8 nC
   trⓘ - Rise Time: 88 nS
   Cossⓘ - Output Capacitance: 354 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.074 Ohm
   Package: TO263
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OSG60R074KSZF Datasheet (PDF)

 ..1. Size:414K  oriental semi
 osg60r074kszf.pdf pdf_icon

OSG60R074KSZF

OSG60R074KSZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery di

 5.1. Size:1106K  1
 osg60r074hzf osg60r074fzf.pdf pdf_icon

OSG60R074KSZF

OSG60R074xZF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Applications Ultra-fast and robust body diode PC power Low R & FOM Server power supply DS(on) Excellent low switching loss Telecom Excellent stability and uniformity Solar invertor Easy to drive Super charger for automobiles OSG60R074HZF, OSG60R074FZF , Enhanc

 5.2. Size:924K  oriental semi
 osg60r074hszf.pdf pdf_icon

OSG60R074KSZF

OSG60R074HSZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery di

 5.3. Size:1017K  oriental semi
 osg60r074fzf.pdf pdf_icon

OSG60R074KSZF

OSG60R074FZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio

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History: 3SK95 | AON6404A

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