Справочник MOSFET. OSG60R074KSZF

 

OSG60R074KSZF Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: OSG60R074KSZF
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 278 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 47 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 88 ns
   Cossⓘ - Выходная емкость: 354 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.074 Ohm
   Тип корпуса: TO263
 

 Аналог (замена) для OSG60R074KSZF

   - подбор ⓘ MOSFET транзистора по параметрам

 

OSG60R074KSZF Datasheet (PDF)

 ..1. Size:414K  oriental semi
osg60r074kszf.pdfpdf_icon

OSG60R074KSZF

OSG60R074KSZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery di

 5.1. Size:1106K  1
osg60r074hzf osg60r074fzf.pdfpdf_icon

OSG60R074KSZF

OSG60R074xZF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Applications Ultra-fast and robust body diode PC power Low R & FOM Server power supply DS(on) Excellent low switching loss Telecom Excellent stability and uniformity Solar invertor Easy to drive Super charger for automobiles OSG60R074HZF, OSG60R074FZF , Enhanc

 5.2. Size:924K  oriental semi
osg60r074hszf.pdfpdf_icon

OSG60R074KSZF

OSG60R074HSZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery di

 5.3. Size:1017K  oriental semi
osg60r074fzf.pdfpdf_icon

OSG60R074KSZF

OSG60R074FZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio

Другие MOSFET... OSG60R070HSF , OSG60R070HT3F , OSG60R070HT3ZF , OSG60R070KT3ZF , OSG60R070PT3ZF , OSG60R074FSZF , OSG60R074HSZF , OSG60R074JT3ZF , IRF740 , OSG60R075HSZF , OSG60R092FF , OSG60R092HF , OSG60R092HSF , OSG60R092HT3ZF , OSG60R092PT3ZF , OSG60R096FSF , OSG60R096HSF .

History: CJ3139KDW | CEB6060N | FDS5170N7 | IXTQ96N15P | AD8N60S | SIHFBE20

 

 
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